TPH4R803PL,LQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 48A 8SOP

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 48A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	TPH4R803PL,LQ

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	1975 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	830 mW, 69 W
Rds On (Max) @ Id, Vgs	4.8 mOhm
Supplier Device Package	8-SOP Advance (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.1 V

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	FET Type	Operating Temperature	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage TPH4R803PL,LQ	20 V	48 A	2.1 V	N-Channel	175 °C	8-SOP Advance (5x5)	1975 pF	8-PowerVDFN	22 nC	69 W 830 mW	30 V	Surface Mount	4.5 V 10 V	MOSFET (Metal Oxide)	4.8 mOhm

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General part information

N-Channel 30 V 48A (Tc) 830mW (Ta), 69W (Tc) Surface Mount 8-SOP Advance (5x5)

Technical documentation and resources