1N3881R

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GeneSiC Semiconductor

DIODE GEN PURP REV 200V 6A DO4

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GeneSiC Semiconductor

DIODE GEN PURP REV 200V 6A DO4

Technical Specifications

Parameters and characteristics for this part

Specification	1N3881R

Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	15 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Reverse Recovery Time (trr)	200 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-4
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.4 V

Part	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Reverse Leakage @ Vr	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Mounting Type	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Current - Average Rectified (Io)
GeneSiC Semiconductor 1N3881R	1.4 V	DO-4	15 µA	DO-203AA DO-4 Stud	150 °C	-65 C	200 mA 500 ns	Chassis Stud Mount	Reverse Polarity Standard	200 V	200 ns	6 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 6A Chassis, Stud Mount DO-4

Technical documentation and resources