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DS1250AB-100IND+ - 32-EDIP

DS1250AB-100IND+

Obsolete
Analog Devices Inc./Maxim Integrated

IC NVSRAM 4MBIT PARALLEL 32EDIP

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DS1250AB-100IND+ - 32-EDIP

DS1250AB-100IND+

Obsolete
Analog Devices Inc./Maxim Integrated

IC NVSRAM 4MBIT PARALLEL 32EDIP

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationDS1250AB-100IND+
Access Time100 ns
Memory FormatNVSRAM
Memory InterfaceParallel
Memory Organization512 K
Memory Size512 kb
Memory TypeNon-Volatile
Mounting TypeThrough Hole
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case0.6 in
Package / Case15.24 mm
Package / Case32-DIP Module
Supplier Device Package32-EDIP
TechnologyNVSRAM (Non-Volatile SRAM)
Voltage - Supply [Max]5.25 V
Voltage - Supply [Min]4.75 V
Write Cycle Time - Word, Page [custom]100 ns
Write Cycle Time - Word, Page [custom]100 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

DS1250AB Series

NVSRAM (Non-Volatile SRAM) Memory IC 4Mbit Parallel 100 ns 32-EDIP

Documents

Technical documentation and resources