ZXTN2005ZTA

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 5.5A I(C), 25V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 4 PIN, SOT-89, 4 PIN

Search across all available documentation for this part.

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 5.5A I(C), 25V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 4 PIN, SOT-89, 4 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	ZXTN2005ZTA

Current - Collector (Ic) (Max) [Max]	5.5 A
Current - Collector Cutoff (Max) [Max]	20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	300 hFE
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-243AA
Power - Max [Max]	2.1 W
Supplier Device Package	SOT-89-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max)	25 V

NPN, 25V, 5.5A, SOT89

Part	Vce Saturation (Max) @ Ib, Ic	Package / Case	Grade	Power - Max [Max]	Qualification	Mounting Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce
Diodes Inc ZXTN2005ZQTA	200 mV	TO-243AA	Automotive	1.5 W	AEC-Q101	Surface Mount	25 V	20 nA	SOT-89-3	NPN	-55 °C	150 °C	5.5 A	150 MHz	300 hFE
Diodes Inc ZXTN2005ZTA	200 mV	TO-243AA		2.1 W		Surface Mount	25 V	20 nA	SOT-89-3	NPN	-55 °C	150 °C	5.5 A	150 MHz	300 hFE
Diodes Inc ZXTN2005GTA		TO-261-4 TO-261AA		3 W		Surface Mount	25 V	50 nA	SOT-223-3	NPN	-55 °C	150 °C	7 A	150 MHz	300 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirement of Automotive Applications.

Technical documentation and resources