PJQ4442P-AU_R2_000A1

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Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

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Active

Panjit International Inc.

40V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ4442P-AU_R2_000A1

Current - Continuous Drain (Id) @ 25°C	12.7 A, 50 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1759 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	53.6 W, 2.4 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	7.5 mOhm
Supplier Device Package	DFN3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Grade	Technology	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case
Panjit International Inc. PJQ4442P-AU_R2_000A1	Automotive	MOSFET (Metal Oxide)	20 V	7.5 mOhm	DFN3333-8	2.5 V	17 nC	12.7 A 50 A	Surface Mount	N-Channel	-55 °C	175 ░C	AEC-Q101	1759 pF	40 V	4.5 V 10 V	2.4 W 53.6 W	8-PowerVDFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 12.7A (Ta), 50A (Tc) 2.4W (Ta), 53.6W (Tc) Surface Mount DFN3333-8

Technical documentation and resources