FKP250A

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Sanken Electric USA Inc.

MOSFET N-CH 250V 50A TO3P

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Sanken Electric USA Inc.

MOSFET N-CH 250V 50A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	FKP250A

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3800 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3P-3 Full Pack
Power Dissipation (Max) [Max]	85 W
Rds On (Max) @ Id, Vgs	43 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max) [Max]	Operating Temperature	FET Type	Technology
Sanken Electric USA Inc. FKP250A	43 mOhm	3800 pF	30 V	4.5 V	TO-3P	10 V	Through Hole	250 V	50 A	TO-3P-3 Full Pack	85 W	150 °C	N-Channel	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 50A (Ta) 85W (Tc) Through Hole TO-3P

Technical documentation and resources