DSEP6-06BS-TRL

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IXYS

DIODE GEN PURP 600V 6A TO252AA

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IXYS

DIODE GEN PURP 600V 6A TO252AA

Technical Specifications

Parameters and characteristics for this part

Specification	DSEP6-06BS-TRL

Capacitance @ Vr, F	5 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	15 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-252AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2.66 V

Part	Package / Case	Mounting Type	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]
IXYS DSEP6-06BS-TRL	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	6 A	15 ns	5 pF	Standard	175 ░C	-55 C	TO-252AA	50 µA	200 mA 500 ns	2.66 V	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 6A Surface Mount TO-252AA

Technical documentation and resources