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2ED28073J06FXUMA1 - null

2ED28073J06FXUMA1

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Infineon Technologies

THE 2ED28073J06F IS A 600 V HALF-BRIDGE GATE DRIVER IC WITH INTEGRATED BOOTSTRAP DIODE (DSO-8 PACKAGE).

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2ED28073J06FXUMA1 - null

2ED28073J06FXUMA1

Active
Infineon Technologies

THE 2ED28073J06F IS A 600 V HALF-BRIDGE GATE DRIVER IC WITH INTEGRATED BOOTSTRAP DIODE (DSO-8 PACKAGE).

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Technical Specifications

Parameters and characteristics for this part

Specification2ED28073J06FXUMA1
Channel TypeIndependent
Current - Peak Output (Source, Sink) [x]20 mA, 80 mA
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]600 V
Input TypeCMOS, TTL
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rise / Fall Time (Typ) [custom]1.5 µs
Rise / Fall Time (Typ) [custom]225 ns
Supplier Device Package8-SOIC
Voltage - Supply [Max]20 V
Voltage - Supply [Min]10 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.30
10$ 1.16
25$ 1.10
100$ 0.91
250$ 0.85
500$ 0.75
1000$ 0.59
Digi-Reel® 1$ 1.30
10$ 1.16
25$ 1.10
100$ 0.91
250$ 0.85
500$ 0.75
1000$ 0.59
Tape & Reel (TR) 2500$ 0.49
NewarkEach (Supplied on Cut Tape) 1$ 0.65

Description

General part information

2ED28073 Series

600 Vhalf-bridgegate driver IC with integrated bootstrap diode with typical 0.02 A source and 0.08 A sink currents in DSO-8 package for driving MOSFETs including fast body diode CoolMOS PFD7 super junctionMOSFETsandIGBTs. The 2ED28073J06F is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a low di/dt output stage optimized to drive CoolMOS™ PFD7 in motor drive applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 V.

Documents

Technical documentation and resources