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1SS427,L3M - SOD-923

1SS427,L3M

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Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SOD923

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1SS427,L3M - SOD-923

1SS427,L3M

Active
Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SOD923

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification1SS427,L3M
Capacitance @ Vr, F0.3 pF
Current - Average Rectified (Io)100 mA
Current - Reverse Leakage @ Vr500 nA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseSOD-923
Reverse Recovery Time (trr)1.6 ns
SpeedAny Speed
Speed200 mA
Supplier Device PackageSOD-923
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.22
10$ 0.14
100$ 0.08
500$ 0.06
1000$ 0.05
2000$ 0.05
5000$ 0.04
Digi-Reel® 1$ 0.22
10$ 0.14
100$ 0.08
500$ 0.06
1000$ 0.05
2000$ 0.05
5000$ 0.04
Tape & Reel (TR) 10000$ 0.04
20000$ 0.03
30000$ 0.03
50000$ 0.03
70000$ 0.03
100000$ 0.03
250000$ 0.03

Description

General part information

1SS427 Series

Diode 80 V 100mA Surface Mount SOD-923

Documents

Technical documentation and resources