FKP330C

Obsolete

Sanken Electric USA Inc.

MOSFET N-CH 330V 30A TO3P

Search across all available documentation for this part.

Obsolete

Sanken Electric USA Inc.

MOSFET N-CH 330V 30A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	FKP330C

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	330 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4600 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-3P-3 Full Pack
Power Dissipation (Max) [Max]	85 W
Rds On (Max) @ Id, Vgs	63 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Supplier Device Package	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Operating Temperature	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs
Sanken Electric USA Inc. FKP330C	TO-3P	85 W	30 A	330 V	Through Hole	N-Channel	150 °C	TO-3P-3 Full Pack	4.5 V	30 V	MOSFET (Metal Oxide)	10 V	4600 pF	63 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 330 V 30A (Ta) 85W (Tc) Through Hole TO-3P

Technical documentation and resources