AOD8N25

Active

Alpha & Omega Semiconductor Inc.

MOSFET N CH 250V 8A TO252

Search across all available documentation for this part.

Active

Alpha & Omega Semiconductor Inc.

MOSFET N CH 250V 8A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	AOD8N25

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.2 nC
Input Capacitance (Ciss) (Max) @ Vds	306 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	78 W
Rds On (Max) @ Id, Vgs	560 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.3 V

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max)	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id
Alpha & Omega Semiconductor Inc. AOD8N25	30 V	306 pF	Surface Mount	150 °C	-50 °C	TO-252 (DPAK)	560 mOhm	MOSFET (Metal Oxide)	78 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	8 A	7.2 nC	250 V	10 V	4.3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly