PJQ2815_R1_00001

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Panjit International Inc.

DFN2020-6L, MOSFET

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Panjit International Inc.

DFN2020-6L, MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ2815_R1_00001

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.2 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	907 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-VDFN Exposed Pad
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	52 mOhm
Supplier Device Package	DFN2020-6L
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	900 mV

Part	Configuration	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power - Max [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]
Panjit International Inc. PJQ2815_R1_00001	2 P-Channel	Surface Mount	-55 °C	150 °C	900 mV	4.2 A	DFN2020-6L	20 V	52 mOhm	907 pF	6-VDFN Exposed Pad	1.5 W	MOSFET (Metal Oxide)	24 nC

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General part information

Mosfet Array 20V 4.2A (Ta) 1.5W (Ta) Surface Mount DFN2020-6L

Technical documentation and resources