VSLY5850
ActiveVishay General Semiconductor - Diodes Division
EMITTER IR 850NM 100MA T 1 3/4
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VSLY5850
ActiveVishay General Semiconductor - Diodes Division
EMITTER IR 850NM 100MA T 1 3/4
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | VSLY5850 |
|---|---|
| Current - DC Forward (If) (Max) [Max] | 100 mA |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Orientation | Top View |
| Package / Case | T 1 3/4 |
| Radiant Intensity (Ie) Min @ If | 100 mA |
| Radiant Intensity (Ie) Min @ If [Min] | 300 mW/sr |
| Type | Infrared (IR) |
| Viewing Angle | 6 ° |
| Voltage - Forward (Vf) (Typ) | 1.65 V |
| Wavelength | 850 nm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 1.50 | |
| 10 | $ 0.95 | |||
| 100 | $ 0.70 | |||
| 500 | $ 0.64 | |||
| 1000 | $ 0.53 | |||
| 4000 | $ 0.50 | |||
| 8000 | $ 0.49 | |||
| 12000 | $ 0.48 | |||
Description
General part information
VSLY5850 Series
Infrared (IR) Emitter 850nm 1.65V 100mA 300mW/sr @ 100mA 6° T 1 3/4
Documents
Technical documentation and resources