2SK3943-ZP-E1-AY

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Renesas Electronics Corporation

NCH SINGLE POWER MOSFET 40V 82A 3.5MOHM MP-25ZP/TO-263

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Renesas Electronics Corporation

NCH SINGLE POWER MOSFET 40V 82A 3.5MOHM MP-25ZP/TO-263

Technical Specifications

Parameters and characteristics for this part

Specification	2SK3943-ZP-E1-AY

Current - Continuous Drain (Id) @ 25°C	82 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
Drive Voltage (Max Rds On, Min Rds On)	5.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC
Input Capacitance (Ciss) (Max) @ Vds	5800 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	1.5 W, 104 W
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	TO-263
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Single Power Mosfet 40V 82A 3.5Mohm Mp-25Zp/To-263

Part	Drive Voltage (Max Rds On, Min Rds On)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)	FET Type
Renesas Electronics Corporation 2SK3943-ZP-E1-AY	10 V	5.5 V	MOSFET (Metal Oxide)	150 °C	40 V	5800 pF	TO-263	20 V	93 nC	Surface Mount	82 A	3.5 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1.5 W 104 W	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The 2SK3943 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Technical documentation and resources