XPN6R706NC,L1XHQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 60V 40A 8TSON

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Toshiba Semiconductor and Storage

MOSFET N-CH 60V 40A 8TSON

Technical Specifications

Parameters and characteristics for this part

Specification	XPN6R706NC,L1XHQ

Current - Continuous Drain (Id) @ 25°C	40 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	2000 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	840 mW, 100 W
Rds On (Max) @ Id, Vgs [Max]	6.7 mOhm
Supplier Device Package	8-TSON Advance-WF
Supplier Device Package [x]	3.1
Supplier Device Package [y]	3.1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package [y]	Supplier Device Package	Supplier Device Package [x]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	FET Type
Toshiba Semiconductor and Storage XPN6R706NC,L1XHQ	100 W 840 mW	2000 pF	20 V	Surface Mount	2.5 V	3.1	8-TSON Advance-WF	3.1	40 A	8-PowerVDFN	6.7 mOhm	35 nC	MOSFET (Metal Oxide)	60 V	4.5 V 10 V	175 °C	N-Channel

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General part information

N-Channel 60 V 40A (Ta) 840mW (Ta), 100W (Tc) Surface Mount 8-TSON Advance-WF (3.1x3.1)

Technical documentation and resources