MPQ6502 TIN/LEAD

Obsolete

Central Semiconductor Corp

TRANS 2NPN/2PNP 30V 0.5A

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Obsolete

Central Semiconductor Corp

TRANS 2NPN/2PNP 30V 0.5A

Technical Specifications

Parameters and characteristics for this part

Specification	MPQ6502 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	30 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	14-DIP
Package / Case [x]	0.3 "
Package / Case [y]	7.62 mm
Power - Max [Max]	650 mW
Supplier Device Package	TO-116
Transistor Type	2 NPN, 2 PNP
Vce Saturation (Max) @ Ib, Ic	1.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Package / Case [y]	Package / Case [x]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type
Central Semiconductor Corp MPQ6502 TIN/LEAD	Through Hole	30 V	1.4 V	150 °C	-65 °C	14-DIP	7.62 mm	0.3 "	200 MHz	30	TO-116	30 nA	650 mW	500 mA	2 NPN 2 PNP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor Array 2 NPN, 2 PNP 30V 500mA 200MHz 650mW Through Hole TO-116

Technical documentation and resources