ZXMP6A18DN8TA
ActivePOWER FIELD-EFFECT TRANSISTOR, 3.7A I(D), 60V, 0.055OHM, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8
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ZXMP6A18DN8TA
ActivePOWER FIELD-EFFECT TRANSISTOR, 3.7A I(D), 60V, 0.055OHM, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8
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Technical Specifications
Parameters and characteristics for this part
| Specification | ZXMP6A18DN8TA |
|---|---|
| Configuration | 2 P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7 A |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1580 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power - Max [Max] | 1.8 W |
| Rds On (Max) @ Id, Vgs [Max] | 55 mOhm |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
ZXMP6A18DN8 Series
This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
Documents
Technical documentation and resources