RT1E050RPTR

Obsolete

Rohm Semiconductor

MOSFET P-CH 30V 5A 8TSST

Search across all available documentation for this part.

Obsolete

Rohm Semiconductor

MOSFET P-CH 30V 5A 8TSST

Technical Specifications

Parameters and characteristics for this part

Specification	RT1E050RPTR

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	1.25 W
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	8-TSST
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Operating Temperature
Rohm Semiconductor RT1E050RPTR	Surface Mount	36 mOhm	5 A	8-TSST	20 V	4 V	10 V	2.5 V	30 V	1300 pF	P-Channel	MOSFET (Metal Oxide)	13 nC	1.25 W	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$