
1N6282AHE3_B/C
ActiveVishay General Semiconductor - Diodes Division
1.5KW,30V 5%,UNIDIR,AXIAL TVS
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet

1N6282AHE3_B/C
ActiveVishay General Semiconductor - Diodes Division
1.5KW,30V 5%,UNIDIR,AXIAL TVS
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N6282AHE3_B/C |
|---|---|
| Applications | Telecom |
| Grade | Automotive |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | Axial, DO-27, DO-201AA |
| Power - Peak Pulse | 1.5 kW |
| Power - Peak Pulse | 1500 W |
| Power Line Protection | False |
| Qualification | AEC-Q101 |
| Supplier Device Package | 1.5KE |
| Type | Zener |
| Unidirectional Channels [custom] | 1 |
| Voltage - Breakdown (Min) [Min] | 28.5 V |
| Voltage - Clamping (Max) @ Ipp [Max] | 41.4 V |
| Voltage - Reverse Standoff (Typ) | 25.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
1N6282 Series
41.4V Clamp 36.2A Ipp Tvs Diode Through Hole 1.5KE
Documents
Technical documentation and resources