TPWR7904PB,L1XHQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 150A 8DSOP

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 150A 8DSOP

Technical Specifications

Parameters and characteristics for this part

Specification	TPWR7904PB,L1XHQ

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	85 nC
Input Capacitance (Ciss) (Max) @ Vds	6650 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	960 mW, 170 W
Rds On (Max) @ Id, Vgs [Max]	0.79 mOhm
Supplier Device Package	8-DSOP Advance
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature	Rds On (Max) @ Id, Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage TPWR7904PB,L1XHQ	40 V	6650 pF	170 W 960 mW	20 V	150 A	MOSFET (Metal Oxide)	175 °C	0.79 mOhm	N-Channel	6 V 10 V	3 V	8-DSOP Advance	Surface Mount	8-PowerVDFN	85 nC

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