GB50SLT12-247

Obsolete

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 150A 2-PIN(2+TAB) TO-247AC

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Obsolete

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 150A 2-PIN(2+TAB) TO-247AC

Technical Specifications

Parameters and characteristics for this part

Specification	GB50SLT12-247

Capacitance @ Vr, F	2940 pF
Current - Average Rectified (Io)	50 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Current - Reverse Leakage @ Vr	Speed	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Supplier Device Package	Current - Average Rectified (Io)	Technology	Voltage - Forward (Vf) (Max) @ If	Package / Case
GeneSiC Semiconductor GB50SLT12-247	1 mA	No Recovery Time	0 ns	1.2 kV	2940 pF	175 ░C	-55 C	Through Hole	TO-247-2	50 A	SiC (Silicon Carbide) Schottky	1.8 V	TO-247-2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 50A Through Hole TO-247-2

Technical documentation and resources