2SCR574DGTL

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Rohm Semiconductor

TRANSISTOR, NPN, 80V, 2A, TO-252

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Rohm Semiconductor

TRANSISTOR, NPN, 80V, 2A, TO-252

Technical Specifications

Parameters and characteristics for this part

Specification	2SCR574DGTL

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	280 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	10 W
Supplier Device Package	CPT3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

NPN, TO-252 (DPAK), 80V 2A, Power Transistor

Part	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Mounting Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Frequency - Transition	Power - Max [Max]
Rohm Semiconductor 2SCR574DGTL	2 A	150 °C	Surface Mount	1 µA	120	DPAK (2 Leads + Tab) SC-63 TO-252-3	80 V	NPN	300 mV	CPT3	280 MHz	10 W
Rohm Semiconductor 2SCR574D3TL1	2 A	150 °C	Surface Mount	1 µA	120	DPAK (2 Leads + Tab) SC-63 TO-252-3	80 V	NPN	300 mV	TO-252	280 MHz	10 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Newark	Each (Supplied on Cut Tape)	1	$ 0.54

General part information

2SCR574D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.

Technical documentation and resources

No documents available