NXPLQSC106506Q

Obsolete

WeEn Semiconductors Co., Ltd

DIODE SCHOTTKY 650V 10A TO220AC

Search across all available documentation for this part.

Obsolete

WeEn Semiconductors Co., Ltd

DIODE SCHOTTKY 650V 10A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	NXPLQSC106506Q

Capacitance @ Vr, F	250 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	230 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.85 V

Part	Package / Case	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io) (per Diode)	Technology	Speed	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Diode Configuration	Capacitance @ Vr, F	Current - Average Rectified (Io)
WeEn Semiconductors Co., Ltd NXPLQSC20650W6Q	TO-247-3	TO-247-3	1.85 V	650 V	Through Hole	20 A	SiC (Silicon Carbide) Schottky	No Recovery Time	230 µA	175 °C	1 Pair Common Cathode
WeEn Semiconductors Co., Ltd NXPLQSC106506Q	TO-220-2	TO-220AC	1.85 V	650 V	Through Hole		SiC (Silicon Carbide) Schottky	No Recovery Time	230 µA	175 °C		250 pF	10 A
WeEn Semiconductors Co., Ltd NXPLQSC30650W6Q	TO-247-3	TO-247-3	1.95 V	650 V	Through Hole	30 A	SiC (Silicon Carbide) Schottky	No Recovery Time	250 µA	175 °C	1 Pair Common Cathode

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 650 V 10A Through Hole TO-220AC

Technical documentation and resources

No documents available