2SB647A-B-AP

Obsolete

Micro Commercial Components

TRANS PNP 100V 1A TO92MOD

Search across all available documentation for this part.

Obsolete

Micro Commercial Components

TRANS PNP 100V 1A TO92MOD

Technical Specifications

Parameters and characteristics for this part

Specification	2SB647A-B-AP

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60 hFE
Frequency - Transition	140 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, Formed Leads, TO-226-3
Power - Max [Max]	900 mW
Supplier Device Package	TO-92MOD
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Power - Max [Max]
Micro Commercial Components 2SB647A-B-AP	Through Hole	-55 °C	150 °C	1 V	TO-92MOD	1 A	10 µA	60 hFE	140 MHz	PNP	100 V	Formed Leads TO-226-3 TO-92-3 Long Body	900 mW
Micro Commercial Components 2SB647-B-AP	Through Hole	-55 °C	150 °C	1 V	TO-92MOD	1 A	10 µA	60 hFE	140 MHz	PNP	80 V	Formed Leads TO-226-3 TO-92-3 Long Body	900 mW
Micro Commercial Components 2SB647L-B-AP	Through Hole	-55 °C	150 °C	1 V	TO-92	1 A	10 µA	60 hFE	140 MHz	PNP	80 V	TO-226-3 TO-92-3	750 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 100 V 1 A 140MHz 900 mW Through Hole TO-92MOD

Technical documentation and resources