DCG45X1200NA

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IXYS

DIODE MOD SIC 1200V 22A SOT227B

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IXYS

DIODE MOD SIC 1200V 22A SOT227B

Technical Specifications

Parameters and characteristics for this part

Specification	DCG45X1200NA

Current - Average Rectified (Io) (per Diode)	22 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOT-227-4, miniBLOC
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	SOT-227B
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Reverse Recovery Time (trr)	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Supplier Device Package	Speed
IXYS DCG45X1200NA	0 ns	22 A	2 Independent	-40 °C	175 ░C	SOT-227-4 miniBLOC	200 µA	1.2 kV	SiC (Silicon Carbide) Schottky	1.8 V	Chassis Mount	SOT-227B	No Recovery Time

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 2 Independent 1200 V 22A Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources