PJT7838_R1_00001

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Panjit International Inc.

50V N-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

50V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJT7838_R1_00001

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	400 mA
Drain to Source Voltage (Vdss)	50 V
Gate Charge (Qg) (Max) @ Vgs [Max]	0.95 nC
Input Capacitance (Ciss) (Max) @ Vds	36 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	350 mW
Rds On (Max) @ Id, Vgs [Max]	1.45 Ohm
Supplier Device Package	SOT-363
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Configuration	Package / Case	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Panjit International Inc. PJT7838_R1_00001	1.45 Ohm	0.95 nC	36 pF	350 mW	50 V	SOT-363	-55 °C	150 °C	1 V	2 N-Channel (Dual)	6-TSSOP SC-88 SOT-363	MOSFET (Metal Oxide)	Surface Mount	400 mA

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General part information

Mosfet Array 50V 400mA (Ta) 350mW (Ta) Surface Mount SOT-363

Technical documentation and resources