VS-30APF06-M3

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 30A TO247AC

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 30A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-30APF06-M3

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	160 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AC
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.41 V

Part	Speed	Supplier Device Package	Mounting Type	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]
Vishay General Semiconductor - Diodes Division VS-30APF06-M3	200 mA 500 ns	TO-247AC	Through Hole	100 µA	160 ns	150 °C	-40 °C	TO-247-3	1.41 V	30 A	Standard	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	500	$ 3.16

General part information

Diode 600 V 30A Through Hole TO-247AC

Technical documentation and resources