GBJ25J

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GeneSiC Semiconductor

600V 25A GBJ SINGLE PHASE BRIDGE

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GeneSiC Semiconductor

600V 25A GBJ SINGLE PHASE BRIDGE

Technical Specifications

Parameters and characteristics for this part

Specification	GBJ25J

Current - Average Rectified (Io)	25 A
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-SIP, GBJ
Supplier Device Package	GBJ
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.05 V
Voltage - Peak Reverse (Max) [Max]	600 V

Part	Supplier Device Package	Mounting Type	Package / Case	Voltage - Forward (Vf) (Max) @ If	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Peak Reverse (Max) [Max]	Current - Average Rectified (Io)	Diode Type	Current - Reverse Leakage @ Vr	Technology
GeneSiC Semiconductor GBJ25J	GBJ	Through Hole	4-SIP GBJ	1.05 V	-55 °C	150 °C	600 V	25 A	Single Phase	10 µA	Standard

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General part information

Bridge Rectifier Single Phase Standard 600 V Through Hole GBJ

Technical documentation and resources