1N5820H

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 3A DO201AD

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 20V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	1N5820H

Capacitance @ Vr, F	200 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	500 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	20 V
Voltage - Forward (Vf) (Max) @ If	475 mV

Part	Current - Average Rectified (Io)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr	Grade	Package / Case	Technology	Speed	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Qualification	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Mounting Type
Taiwan Semiconductor Corporation 1N5820H	3 A	-55 °C	125 °C	500 µA	Automotive	DO-201AD Axial	Schottky	200 mA 500 ns	200 pF	475 mV	AEC-Q101	20 V	DO-201AD	Through Hole
Taiwan Semiconductor Corporation 1N5820	3 A	-55 °C	125 °C	500 µA		DO-201AD Axial	Schottky	200 mA 500 ns	200 pF	475 mV		20 V	DO-201AD	Through Hole

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General part information

Diode 20 V 3A Through Hole DO-201AD

Technical documentation and resources

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