1N4005GHA0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO204AL

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO204AL

Technical Specifications

Parameters and characteristics for this part

Specification	1N4005GHA0G

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AL, DO-41, Axial
Qualification	AEC-Q101
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-204AL (DO-41)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Qualification	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Grade	Capacitance @ Vr, F	Speed	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr	Mounting Type
Taiwan Semiconductor Corporation 1N4005GHR1G	AEC-Q101	Standard	Axial DO-204AL DO-41	1 V	1 A	Automotive	10 pF	Standard Recovery >500ns	200 mA	150 °C	-55 °C	600 V	DO-204AL (DO-41)	5 µA	Through Hole
Taiwan Semiconductor Corporation 1N4005GH	AEC-Q101	Standard	Axial DO-204AL DO-41	1 V	1 A	Automotive	10 pF	Standard Recovery >500ns	200 mA	150 °C	-55 °C	600 V	DO-204AL (DO-41)	5 µA	Through Hole
Taiwan Semiconductor Corporation 1N4005GHA0G	AEC-Q101	Standard	Axial DO-204AL DO-41	1 V	1 A	Automotive	10 pF	Standard Recovery >500ns	200 mA	150 °C	-55 °C	600 V	DO-204AL (DO-41)	5 µA	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 1A Through Hole DO-204AL (DO-41)

Technical documentation and resources

No documents available