GBU4J

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GeneSiC Semiconductor

BRIDGE RECT 1PHASE 600V 4A GBU

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GeneSiC Semiconductor

BRIDGE RECT 1PHASE 600V 4A GBU

Technical Specifications

Parameters and characteristics for this part

Specification	GBU4J

Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-SIP, GBU
Supplier Device Package	GBU
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	600 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Reverse Leakage @ Vr	Diode Type	Voltage - Forward (Vf) (Max) @ If	Technology	Package / Case	Current - Average Rectified (Io)	Voltage - Peak Reverse (Max) [Max]	Supplier Device Package	Mounting Type
GeneSiC Semiconductor GBU4B	-55 °C	150 °C	5 µA	Single Phase	1.1 V	Standard	4-SIP GBU	4 A	100 V	GBU	Through Hole
GeneSiC Semiconductor GBU4M	-55 °C	150 °C	5 µA	Single Phase	1.1 V	Standard	4-SIP GBU	4 A	1000 V	GBU	Through Hole
GeneSiC Semiconductor GBU4J	-55 °C	150 °C	5 µA	Single Phase	1.1 V	Standard	4-SIP GBU	4 A	600 V	GBU	Through Hole
GeneSiC Semiconductor GBU4A	-55 °C	150 °C	5 µA	Single Phase	1.1 V	Standard	4-SIP GBU	4 A	50 V	GBU	Through Hole
GeneSiC Semiconductor GBU4K	-55 °C	150 °C	5 µA	Single Phase	1.1 V	Standard	4-SIP GBU	4 A	800 V	GBU	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 600 V Through Hole GBU

Technical documentation and resources