1N5831

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GeneSiC Semiconductor

DIODE SCHOTTKY 35V 25A DO4

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GeneSiC Semiconductor

DIODE SCHOTTKY 35V 25A DO4

Technical Specifications

Parameters and characteristics for this part

Specification	1N5831

Current - Average Rectified (Io)	25 A
Current - Reverse Leakage @ Vr	2 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Stud, DO-203AA, DO-4
Speed	200 mA, 500 ns
Supplier Device Package	DO-4
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	35 V
Voltage - Forward (Vf) (Max) @ If	580 mV

Part	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Supplier Device Package	Current - Reverse Leakage @ Vr	Mounting Type	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case
GeneSiC Semiconductor 1N5831	580 mV	25 A	150 °C	-55 °C	200 mA 500 ns	DO-4	2 mA	Chassis Stud Mount	Schottky	35 V	DO-203AA DO-4 Stud

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General part information

Diode 35 V 25A Chassis, Stud Mount DO-4

Technical documentation and resources