BAS40 RFG

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 200MA SOT23

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 200MA SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	BAS40 RFG

Capacitance @ Vr, F	5 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	200 nA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	SOT-23-3, TO-236-3, SC-59
Reverse Recovery Time (trr)	5 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SOT-23
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Capacitance @ Vr, F	Speed	Speed	Current - Average Rectified (Io)	Package / Case	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Mounting Type	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Diode Configuration
Taiwan Semiconductor Corporation BAS40 RFG	SOT-23	40 V	Schottky	5 pF	Any Speed	200 mA	200 mA	SC-59 SOT-23-3 TO-236-3	1 V	125 °C	-65 C	5 ns	Surface Mount	200 nA
Taiwan Semiconductor Corporation BAS40-06 RFG	SOT-23	40 V	Schottky		Any Speed	200 mA		SC-59 SOT-23-3 TO-236-3	1 V	125 °C	-65 C	5 ns	Surface Mount	200 nA	200 mA	1 Pair Common Anode
Taiwan Semiconductor Corporation BAS40-05 RFG	SOT-23	40 V	Schottky		Any Speed	200 mA		SC-59 SOT-23-3 TO-236-3	1 V	125 °C	-65 C	5 ns	Surface Mount	200 nA	200 mA	1 Pair Common Cathode

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General part information

Diode 40 V 200mA Surface Mount SOT-23

Technical documentation and resources