MBR12035CTR

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GeneSiC Semiconductor

DIODE MOD SCHOTT 35V 120A 2TOWER

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GeneSiC Semiconductor

DIODE MOD SCHOTT 35V 120A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBR12035CTR

Current - Average Rectified (Io) (per Diode)	120 A
Current - Reverse Leakage @ Vr	3 mA
Diode Configuration	1 Pair Common Anode
Mounting Type	Chassis Mount
Package / Case	Twin Tower
Speed	200 mA, 500 ns
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	35 V
Voltage - Forward (Vf) (Max) @ If	650 mV

Part	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io) (per Diode)	Mounting Type	Diode Configuration	Supplier Device Package	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Voltage - Forward (Vf) (Max) @ If	Technology
GeneSiC Semiconductor MBR12035CT	3 mA	120 A	Chassis Mount	1 Pair Common Cathode	Twin Tower	200 mA 500 ns	150 °C	-55 °C	35 V	Twin Tower	650 mV	Schottky
GeneSiC Semiconductor MBR12035CTR	3 mA	120 A	Chassis Mount	1 Pair Common Anode	Twin Tower	200 mA 500 ns			35 V	Twin Tower	650 mV	Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	80	$ 57.41

General part information

Diode Array 1 Pair Common Anode 35 V 120A (DC) Chassis Mount Twin Tower

Technical documentation and resources