MBR50030CT

Obsolete

GeneSiC Semiconductor

DIODE MOD SCHOTT 30V 250A 2TOWER

Search across all available documentation for this part.

Obsolete

GeneSiC Semiconductor

DIODE MOD SCHOTT 30V 250A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBR50030CT

Current - Average Rectified (Io) (per Diode)	250 A
Current - Reverse Leakage @ Vr	1 mA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Twin Tower
Speed	200 mA, 500 ns
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If [Max]	750 mV

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Speed	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Diode Configuration	Technology	Mounting Type
GeneSiC Semiconductor MBR50030CT	150 °C	-55 °C	Twin Tower	750 mV	200 mA 500 ns	250 A	1 mA	30 V	Twin Tower	1 Pair Common Cathode	Schottky	Chassis Mount
GeneSiC Semiconductor MBR50030CTR	150 °C	-55 °C	Twin Tower	750 mV	200 mA 500 ns	250 A	1 mA	30 V	Twin Tower	1 Pair Common Anode	Schottky	Chassis Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 30 V 250A Chassis Mount Twin Tower

Technical documentation and resources