BYV40W-600PQ

Active

WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 40A TO247-2

Search across all available documentation for this part.

Active

WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 40A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	BYV40W-600PQ

Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	79 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Current - Reverse Leakage @ Vr	Diode Configuration	Technology	Operating Temperature - Junction	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Reverse Recovery Time (trr)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)
WeEn Semiconductors Co., Ltd BYV40E-150,115	10 µA	1 Pair Common Cathode	Standard	150 °C	TO-261-4 TO-261AA	200 mA 500 ns	1 V	Surface Mount	25 ns	SC-73
WeEn Semiconductors Co., Ltd BYV40W-600PQ	10 µA		Standard		TO-247-2	200 mA 500 ns	1.6 V	Through Hole	79 ns	TO-247-2	600 V	175 °C	40 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	900	$ 1.37

General part information

Diode 600 V 40A Through Hole TO-247-2

Technical documentation and resources

No documents available