1SS244T-77

Obsolete

Rohm Semiconductor

DIODE GEN PURP 220V 200MA MSD

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Obsolete

Rohm Semiconductor

DIODE GEN PURP 220V 200MA MSD

Technical Specifications

Parameters and characteristics for this part

Specification	1SS244T-77

Capacitance @ Vr, F	3 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	DO-34, DO-204AG, Axial
Reverse Recovery Time (trr)	75 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	MSD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	220 V
Voltage - Forward (Vf) (Max) @ If	1.5 V

Part	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Supplier Device Package	Technology	Speed	Speed	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)
Rohm Semiconductor 1SS244T-77	75 ns	3 pF	175 °C	MSD	Standard	Any Speed	200 mA	10 µA	1.5 V	Axial DO-204AG DO-34	220 V	Through Hole	200 mA
Rohm Semiconductor 1SS244T-72	75 ns	3 pF	175 °C	MSD	Standard	Any Speed	200 mA	10 µA	1.5 V	Axial DO-204AG DO-34	220 V	Through Hole	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 220 V 200mA Through Hole MSD

Technical documentation and resources