VS-1EFH01HM3/I

Active

Vishay General Semiconductor - Diodes Division

DIODE STANDARD 100V 1A DO219AB

Search across all available documentation for this part.

Active

Vishay General Semiconductor - Diodes Division

DIODE STANDARD 100V 1A DO219AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-1EFH01HM3/I

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	2 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-219AB
Qualification	AEC-Q101
Reverse Recovery Time (trr)	16 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-219AB (SMF)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	930 mV

Part	Mounting Type	Technology	Package / Case	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Grade	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Qualification	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Vishay General Semiconductor - Diodes Division VS-1EFH01HM3/I	Surface Mount	Standard	DO-219AB	DO-219AB (SMF)	2 µA	200 mA 500 ns	Automotive	100 V	930 mV	16 ns	1 A	AEC-Q101	175 ░C	-65 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 1A Surface Mount DO-219AB (SMF)

Technical documentation and resources