71V65803S100BQI

Obsolete

Renesas Electronics Corporation

3.3V 512K X 18 ZBT SYNCHRONOUS 3.3V I/O PIPELINED SRAM

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DocumentsDatasheet 71V65603/803Datasheet

71V65803S100BQI

Obsolete

Renesas Electronics Corporation

3.3V 512K X 18 ZBT SYNCHRONOUS 3.3V I/O PIPELINED SRAM

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DocumentsDatasheet 71V65603/803Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	71V65803S100BQI

Access Time	5 ns
Clock Frequency	100 MHz
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	512 K
Memory Size	9 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	165-TBGA
Supplier Device Package	165-CABGA (13x15)
Technology	SRAM - Synchronous, SDR (ZBT)
Voltage - Supply [Max]	3.465 V
Voltage - Supply [Min]	3.135 V

71V65803 Series

3.3V 512K x 18 ZBT Synchronous 3.3V I/O Pipelined SRAM

Part	Access Time	Memory Interface	Package / Case	Memory Organization	Supplier Device Package	Memory Size	Memory Type	Clock Frequency	Operating Temperature [Max]	Operating Temperature [Min]	Memory Format	Voltage - Supply [Max]	Voltage - Supply [Min]	Technology	Mounting Type
Renesas Electronics Corporation 71V65803S100PFGI8	5 ns	Parallel	100-LQFP	512 K	100-TQFP (14x14)	9 Mbit	Volatile	100 MHz	85 °C	-40 °C	SRAM	3.465 V	3.135 V	SRAM - Synchronous SDR (ZBT)	Surface Mount
Renesas Electronics Corporation 71V65803S150PFGI8	3.8 ns	Parallel	100-LQFP	512 K	100-TQFP (14x14)	9 Mbit	Volatile	150 MHz	85 °C	-40 °C	SRAM	3.465 V	3.135 V	SRAM - Synchronous SDR (ZBT)	Surface Mount
Renesas Electronics Corporation 71V65803S100BQ	5 ns	Parallel	165-TBGA	512 K	165-CABGA (13x15)	9 Mbit	Volatile	100 MHz	70 °C	0 °C	SRAM	3.465 V	3.135 V	SRAM - Synchronous SDR (ZBT)	Surface Mount
Renesas Electronics Corporation 71V65803S133BGI	4.2 ns	Parallel	119-BGA	512 K	119-PBGA (14x22)	9 Mbit	Volatile	133 MHz	85 °C	-40 °C	SRAM	3.465 V	3.135 V	SRAM - Synchronous SDR (ZBT)	Surface Mount
Renesas Electronics Corporation 71V65803S100BGG8	5 ns	Parallel	119-BGA	512 K	119-PBGA (14x22)	9 Mbit	Volatile	100 MHz	70 °C	0 °C	SRAM	3.465 V	3.135 V	SRAM - Synchronous SDR (ZBT)	Surface Mount
Renesas Electronics Corporation 71V65803S100BGGI8	5 ns	Parallel	119-BGA	512 K	119-PBGA (14x22)	9 Mbit	Volatile	100 MHz	85 °C	-40 °C	SRAM	3.465 V	3.135 V	SRAM - Synchronous SDR (ZBT)	Surface Mount
Renesas Electronics Corporation 71V65803S100BQI	5 ns	Parallel	165-TBGA	512 K	165-CABGA (13x15)	9 Mbit	Volatile	100 MHz	85 °C	-40 °C	SRAM	3.465 V	3.135 V	SRAM - Synchronous SDR (ZBT)	Surface Mount
Renesas Electronics Corporation 71V65803S133BGG8	4.2 ns	Parallel	119-BGA	512 K	119-PBGA (14x22)	9 Mbit	Volatile	133 MHz	70 °C	0 °C	SRAM	3.465 V	3.135 V	SRAM - Synchronous SDR (ZBT)	Surface Mount
Renesas Electronics Corporation 71V65803S133BG	4.2 ns	Parallel	119-BGA	512 K	119-PBGA (14x22)	9 Mbit	Volatile	133 MHz	70 °C	0 °C	SRAM	3.465 V	3.135 V	SRAM - Synchronous SDR (ZBT)	Surface Mount
Renesas Electronics Corporation 71V65803S100PFG8	5 ns	Parallel	100-LQFP	512 K	100-TQFP (14x14)	9 Mbit	Volatile	100 MHz	70 °C	0 °C	SRAM	3.465 V	3.135 V	SRAM - Synchronous SDR (ZBT)	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

71V65803 Series

The 71V65803 3.3V CMOS SRAM, organized as 512K X 18, is designed to eliminate dead bus cycles when turning the bus around between reads and writes or writes and reads. Thus, it has been given the name ZBT™, or Zero Bus Turnaround. The 71V65803 contains data I/O, address, and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.