
UCLAMP0501P.TCT
ActiveTRANS VOLTAGE SUPPRESSOR DIODE, 200W, 5V V(RWM), UNIDIRECTIONAL, 1 ELEMENT, SILICON, 1 X 0.60 MM, 0.50 MM HEIGHT, ROHS COMPLIANT, ULTRA SMALL, SLP1006P2 , 2 PIN
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UCLAMP0501P.TCT
ActiveTRANS VOLTAGE SUPPRESSOR DIODE, 200W, 5V V(RWM), UNIDIRECTIONAL, 1 ELEMENT, SILICON, 1 X 0.60 MM, 0.50 MM HEIGHT, ROHS COMPLIANT, ULTRA SMALL, SLP1006P2 , 2 PIN
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Technical Specifications
Parameters and characteristics for this part
| Specification | UCLAMP0501P.TCT |
|---|---|
| Applications | General Purpose |
| Capacitance @ Frequency | 160 pF |
| Current - Peak Pulse (10/1000µs) | 16 A |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 125 ¯C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 0402 (1006 Metric) |
| Power - Peak Pulse | 200 W |
| Power Line Protection | False |
| Type | Zener |
| Unidirectional Channels [custom] | 1 |
| Voltage - Breakdown (Min) [Min] | 6 V |
| Voltage - Clamping (Max) @ Ipp [Max] | 12.5 V |
| Voltage - Reverse Standoff (Typ) | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.57 | |
| 10 | $ 0.49 | |||
| 100 | $ 0.34 | |||
| 500 | $ 0.28 | |||
| 1000 | $ 0.24 | |||
| Digi-Reel® | 1 | $ 0.57 | ||
| 10 | $ 0.49 | |||
| 100 | $ 0.34 | |||
| 500 | $ 0.28 | |||
| 1000 | $ 0.24 | |||
| Tape & Reel (TR) | 3000 | $ 0.22 | ||
| 6000 | $ 0.20 | |||
| 9000 | $ 0.19 | |||
| 30000 | $ 0.19 | |||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 0.25 | |
| 6000 | $ 0.23 | |||
| 12000 | $ 0.22 | |||
| 18000 | $ 0.20 | |||
| 30000 | $ 0.19 | |||
Description
General part information
UCLAMP0501 Series
The µClamp series low voltage TVS Diode for ESD and CDE protection. It is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers and PDAs. It offers superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. The device is designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT) and cable discharge events (CDE). The device is constructed using Semtech's proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over silicon avalanche diode processes. It features a true operating voltage of 3.3V for superior protection when compared to traditional PN junction devices. It gives the designer the flexibility to protect one line in applications where arrays are not practical.
Documents
Technical documentation and resources