SH8M4TB1

Obsolete

Rohm Semiconductor

MOSFET N/P-CH 30V 9A/7A 8SOP

Search across all available documentation for this part.

Obsolete

Rohm Semiconductor

MOSFET N/P-CH 30V 9A/7A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	SH8M4TB1

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	7 A, 9 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds	1190 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	FET Feature	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs(th) (Max) @ Id [Max]	Technology	Supplier Device Package	Configuration	Input Capacitance (Ciss) (Max) @ Vds
Rohm Semiconductor SH8M4TB1	2 W	7 A 9 A	30 V	18 mOhm	8-SOIC	3.9 mm	0.154 in	Logic Level Gate	150 °C	15 nC	Surface Mount	2.5 V	MOSFET (Metal Oxide)	8-SOP	N and P-Channel	1190 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 9A, 7A 2W Surface Mount 8-SOP

Technical documentation and resources

No documents available