2N5172

Obsolete

ON Semiconductor

TRANS NPN 25V 0.5A TO92-3

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Obsolete

ON Semiconductor

TRANS NPN 25V 0.5A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	2N5172

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max)	25 V

Part	Power - Max [Max]	Mounting Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type
ON Semiconductor 2N5172	625 mW	Through Hole	TO-92-3	25 V	250 mV	TO-226-3 TO-92-3	-55 °C	150 °C	100	100 nA	500 mA	NPN
ON Semiconductor 2N5172_D26Z	625 mW	Through Hole	TO-92-3	25 V	250 mV	TO-226-3 TO-92-3	-55 °C	150 °C	100	100 nA	500 mA	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 25 V 500 mA 625 mW Through Hole TO-92-3

Technical documentation and resources