
VI10150S-M3/4W
ActiveVishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 150V 10A TO262AA
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VI10150S-M3/4W
ActiveVishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 150V 10A TO262AA
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | VI10150S-M3/4W |
|---|---|
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 150 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-262AA |
| Technology | Schottky |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 8000 | $ 0.44 | |
Description
General part information
VI10150 Series
Diode 150 V 10A Through Hole TO-262AA
Documents
Technical documentation and resources