2SD1614-T1-AZ

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Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTORS

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Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTORS

Technical Specifications

Parameters and characteristics for this part

Specification	2SD1614-T1-AZ

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	135 hFE
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Supplier Device Package	SC-62
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic [Max]	500 mV
Voltage - Collector Emitter Breakdown (Max)	20 V

Small Signal Bipolar Transistors

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Mounting Type	Power - Max [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic [Max]	Transistor Type
Renesas Electronics Corporation 2SD1614-AZ	135 hFE	150 °C	Surface Mount	2 W	TO-243AA	2 A	200 MHz	20 V	100 nA	SC-62	500 mV	NPN
Renesas Electronics Corporation 2SD1614-T1-AZ	135 hFE	150 °C	Surface Mount	2 W	TO-243AA	2 A	200 MHz	20 V	100 nA	SC-62	500 mV	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1082	$ 0.28

General part information

Small Signal Bipolar Transistors

Technical documentation and resources

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