VFT10202C-M3/4W

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Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOT 200V 5A ITO220AB

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Vishay General Semiconductor - Diodes Division

DIODE ARR SCHOT 200V 5A ITO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	VFT10202C-M3/4W

Current - Average Rectified (Io) (per Diode)	5 A
Current - Reverse Leakage @ Vr	150 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AB
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	880 mV

Part	Supplier Device Package	Current - Reverse Leakage @ Vr	Diode Configuration	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io) (per Diode)
Vishay General Semiconductor - Diodes Division VFT10202C-M3/4W	ITO-220AB	150 µA	1 Pair Common Cathode	TO-220-3 Full Pack Isolated Tab	200 V	200 mA 500 ns	-40 °C	175 ░C	Schottky	Through Hole	880 mV	5 A

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General part information

Diode Array 1 Pair Common Cathode 200 V 5A Through Hole TO-220-3 Full Pack, Isolated Tab

Technical documentation and resources

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