BAV19 A0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 200MA DO35

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Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 200MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	BAV19 A0G

Capacitance @ Vr, F	5 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	Axial, DO-35, DO-204AH
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-35
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Mounting Type	Supplier Device Package	Package / Case	Technology	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Capacitance @ Vr, F
Taiwan Semiconductor Corporation BAV19WS RRG	120 V	50 ns	1.25 V	150 °C	-65 C	Any Speed	200 mA	Surface Mount	SOD-323F	SC-90 SOD-323F	Standard	100 nA	200 mA	5 pF
Taiwan Semiconductor Corporation BAV19 A0G	100 V		1.25 V	175 ░C	-55 C	Any Speed	200 mA	Through Hole	DO-35	Axial DO-204AH DO-35	Standard	100 nA	200 mA	5 pF
Taiwan Semiconductor Corporation BAV19WS-G RRG	100 V	50 ns	1.25 V	150 °C	-65 C	Any Speed	200 mA	Surface Mount	SOD-323	SC-76 SOD-323	Standard	100 nA	200 mA	5 pF
Taiwan Semiconductor Corporation BAV19WS-G	100 V	50 ns	1.25 V	150 °C	-65 C	Any Speed	200 mA	Surface Mount	SOD-323	SC-76 SOD-323	Standard	100 nA	200 mA	5 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 100 V 200mA Through Hole DO-35

Technical documentation and resources