PJS6416_S1_00001

NRND

Panjit International Inc.

20V N-CHANNEL ENHANCEMENT MODE M

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NRND

Panjit International Inc.

20V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJS6416_S1_00001

Current - Continuous Drain (Id) @ 25°C	7.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	513 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	27 mOhm
Supplier Device Package	SOT-23-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)
Panjit International Inc. PJS6416_S1_00001	513 pF	2 W	1.2 V	N-Channel	27 mOhm	12 V	-55 °C	150 °C	6.8 nC	MOSFET (Metal Oxide)	20 V	7.4 A	SOT-23-6	Surface Mount	SOT-23-6	1.8 V 4.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 7.4A (Ta) 2W (Ta) Surface Mount SOT-23-6

Technical documentation and resources