HS3GB

Active

Taiwan Semiconductor Corporation

50NS, 3A, 400V, HIGH EFFICIENT RECOVERY RECTIFIER

Search across all available documentation for this part.

Active

Taiwan Semiconductor Corporation

50NS, 3A, 400V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	HS3GB

Capacitance @ Vr, F	80 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMB, DO-214AA
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	SMB
Supplier Device Package	DO-214AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Speed	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Supplier Device Package	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If
Taiwan Semiconductor Corporation HS3GB	10 µA	80 pF	400 V	3 A	50 ns	200 mA 500 ns	Standard	150 °C	-55 °C	Surface Mount	SMB	DO-214AA	DO-214AA SMB	1.3 V
Taiwan Semiconductor Corporation HS3G M6G	10 µA	80 pF	400 V	3 A	50 ns	200 mA 500 ns	Standard	150 °C	-55 °C	Surface Mount		DO-214AB (SMC)	DO-214AB SMC	1.3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 400 V 3A Surface Mount DO-214AA (SMB)

Technical documentation and resources