2N6518TA

Obsolete

ON Semiconductor

TRANS PNP 250V 0.5A TO92-3

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Obsolete

ON Semiconductor

TRANS PNP 250V 0.5A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	2N6518TA

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	45
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max)	250 V

Part	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor 2N6518TA	625 mW	-55 °C	150 °C	Through Hole	TO-92-3	500 mA	TO-226-3 TO-92-3	50 nA	200 MHz	PNP	45	250 V	1 V
ON Semiconductor 2N6518TA	625 mW	-55 °C	150 °C	Through Hole	TO-92-3	500 mA	TO-226-3 TO-92-3	50 nA	200 MHz	PNP	45	250 V	1 V
ON Semiconductor 2N6518BU	625 mW	-55 °C	150 °C	Through Hole	TO-92-3	500 mA	TO-226-3 TO-92-3	50 nA	200 MHz	PNP	45	250 V	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 250 V 500 mA 200MHz 625 mW Through Hole TO-92-3

Technical documentation and resources