GBI10D

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Diotec Semiconductor

1BRECT, 200V, 10A

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Diotec Semiconductor

1BRECT, 200V, 10A

Technical Specifications

Parameters and characteristics for this part

Specification	GBI10D

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	GBI, 4-SIP
Supplier Device Package	GBI
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	200 V

Part	Current - Average Rectified (Io)	Mounting Type	Package / Case	Diode Type	Voltage - Forward (Vf) (Max) @ If	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Peak Reverse (Max) [Max]	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology
Diotec Semiconductor GBI10B	3 A	Through Hole	4-SIP GBI	Single Phase	1.1 V	150 °C	-50 °C	100 V	5 µA	GBI	Standard
Diotec Semiconductor GBI10D	3 A	Through Hole	4-SIP GBI	Single Phase	1.1 V	150 °C	-50 °C	200 V	5 µA	GBI	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bridge Rectifier Single Phase Standard 200 V Through Hole GBI

Technical documentation and resources